igbt ipm r-series 1200v class 1200v / 50a 7 in one-package 7MBP50RJ120 features temperature protection provided by directly detecting the junction temperature of the igbts. low power loss and soft switching. high performance and high reliability igbt with overheating protection. both p-side and n-side alarm output available. higher reliability because of a big decrease in number of parts in built-in control circuit. maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) symbol rating unit min. max. bus voltage dc surge short operating collector-emitter voltage *1 collector current dc 1ms duty=98.0% *2 collector power dissipation one transistor *3 collector current dc 1ms forward current of diode collector power dissipation one transistor *3 supply voltage of pre-driver *4 input signal voltage *5 input signal current alarm signal voltage *6 alarm signal current *7 junction temperature operating case temperature storage temperature isolating voltage (terminal to base, 50/60hz sine wave 1min.) screw torque terminal (m5) mounting (m5) v dc v dc(surge) v sc v ces i c i cp -i c p c i c i cp i f p c v cc v in i in v alm i alm t j t opr t stg v iso item 0 0 200 0 - - - - - - - -0.5 -0.5 - -0.5 - - -20 -40 - - - 900 1000 800 1200 50 100 50 357 25 50 25 198 20 vcc+0.5 3 vcc 20 150 100 125 ac2500 3.5 3.5 v v v v a a a w a a a w v v ma v ma c c c v nm nm inverter note *1 : vces shall be applied to the input voltage between terminal p and u or v or w or db, n and u or v or w or db. *2 : 125 c /frd rth(j-c)/(ic x vf max.)=125/0.85(50x3.0)x100=98.0% *3 : pc=125 c /igbt rth(j-c)=125/0.35=357w [inverter] pc=125 c /igbt rth(j-c)=125/0.63=198w [inverter] *4 : vcc shall be applied to the input voltage between terminal no.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : vin shall be applied to the input voltage between terminal no.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13. *6 :valm shall be applied to the voltage between terminal no.2 and 1, no6 and 5, no10 and 9, no.19 and 13. *7 : ialmshall be applied to the input current to terminal no.2,6,10 and 19. brake
7MBP50RJ120 igbt-ipm control circuit item symbol condition min. typ. max. unit supply current of p-line side pre-driver(one unit) supply current of n-line side pre-driver input signal threshold voltage (on/off) input zener voltage alarm signal hold time limiting resistor for alarm switching trequency : 0 to 15khz tc=-20 to 125c fig.7 on off rin=20k ohm tc=-20c fig.2 tc=25c fig.2 tc=125c fig.2 i ccp i ccn v in(th) v z t alm r alm - - 1.00 1.25 - 1.1 - - 1425 - - 1.35 1.60 8.0 - 2.0 - 1500 18 65 1.70 1.95 - - - 4.0 1575 ma ma v v v ms ms ms ohm protection section ( vcc=15v) collector current at off signal input collector-emitter saturation voltage forward voltage of diode turn-on time turn-off time reverse recovery time ton vdc=600v,tj=125c toff ic=50a fig.1, fig.6 trr vdc=600v, if=50a fig.1, fig.6 thermal characteristics ( tc=25c) item symbol min. typ. max. unit junction to case thermal resistance *8 case to fin thermal resistance with compound rth(j-c) rth(j-c) rth(j-c) rth(c-f) - - 0.35 - - 0.85 - - 0.63 - 0.05 - c/w c/w c/w inverter igbt fwd brake igbt item symbol min. typ. max. unit dc bus voltage operating supply voltage of pre-driver screw torque (m5) v dc v cc - recommendable value over current protection level of inverter circuit over current protection level of brake circuit over current protection delay time sc protection delay time igbt chip over heating protection temperature level over heating protection hysteresis over heating protection protection temperature level over heating protection hysteresis under voltage protection level under voltage protection hysteresis electrical characteristics (at tc=tj=25c, vcc=15v unless otherwise specified.) main circuit item symbol condition min. typ. max. unit collector current at off signal input collector-emitter saturation voltage forward voltage of fwd i ces v ce(sat) v f i ces v ce(sat) v f v ce =1200v vin terminal open. ic=50a -ic=50a v ce =1200v vin terminal open. ic=25a terminal -ic=25a terminal terminal chip terminal chip i oc i oc t doc t sc t joh t jh t coh t ch v uv v h tj=125c tj=125c tj=125c tj=125c fig.4 surface of igbt chips v dc =0v, i c =0a casetemperature 75 - - 38 - - -10- --12 150 - -20 - 110 - 125 -20 - 11.0 - 12.5 0.2 0.5 - a a s s c c c c v v noise immunity ( vdc=300v, vcc=15v, test circuit fig.5) common mode rectangular noise common mode lightning surge pulse width 1s, polarity ,10minuets judge : no over-current, no miss operating rise time 1.2s, fall time 50s interval 20s, 10 times judge : no over-current, no miss operating 2.0 - - 5.0 - - item symbol condition min. typ. max. unit item condition min. typ. max. unit kv kv - - 800 v 13.5 15.0 16.5 v 2.5 - 3.0 nm item symbol min. typ. max. unit weight weight wt - 450 - g inverter - - 1.0 ma - - 2.6 v -- - - - 3.0 v -- - - - 1.0 ma - - 2.6 v - - 3.3 1.2 - - s - - 3.6 - - 0.3 *8 : (for 1 device, case is under the device) brake
7MBP50RJ120 igbt-ipm figure 1. switching time waveform definitions figure 2. input/output timing diagram figure.4 definition of tsc figure 5. noise test circuit figure 7. icc test circuit figure 6. switching characteristics test circuit ic ic i alm tsc i alm i alm ic ic ic i alm tsc i alm i alm ic /vin vge (inside ipm ) fault (inside ipm ) /alm gate off on gate on 2m s ( t yp . ) off normal t alm max . t alm > max . off fault : over-current,over-heat or under-voltage on alarm t alm > 123 /vin vge (inside ipm ) fault (inside ipm ) /alm gate off on gate on 2m s ( t yp . ) off normal t alm max . t alm > max . off fault : over-current,over-heat or under-voltage on alarm t alm > 123 on ton vin ic vin(th) vin(th) 50% toff 10% trr 90% 90% on ton vin ic vin(th) vin(th) 50% toff 10% trr 90% 90% vin dc 15v dc 300v n + l ip m ic p hcpl - 4504 vcc gnd n + ip m p - 20 k vin dc 15v dc 300v n + l ip m ic p hcpl - 4504 vcc gnd n + ip m p - 20 k a vcc vin gnd icc p u v w n p.g +8v fsw ipm dc 15v a vcc vin gnd icc p u v w n p.g +8v fsw ipm dc 15v vccu dc 15v + ip m p u v w n 20k vinu gndu sw1 vcc dc 15v 20k vinx gnd sw2 cooling fin earth ac200 v 4700p noise ct vccu dc 15v + ip m p u v w n 20k vinu gndu sw1 vcc dc 15v 20k vinx gnd sw2 cooling fin earth ac200 v 4700p noise ct
7MBP50RJ120 igbt-ipm block diagram outline drawings, mm mass : 450g pre-drivers include following functions 1.amplifier for driver 2.short circuit protection 3.under voltage lockout circuit 4.over current protection 5.igbt chip over heating protection 1 12.5 31 22 9 7 17 1 . 0 5 2 . 0 2 . 0 2 . 0 2 . 0 5 1 . 0 5 1 . 0 3 . 0 1 3 . 0 66.44 2 12 10 6 10 6 10 6 6 . 0 + 3 . 0 - 0 . 1 + 3 . 0 - 17 0 . 1 + 2 . 0 - 5 m - 6 0 . 1 + 3 . 0 - 3 . 0 3 . 0 1 5 1 . 0 3 . 0 22 8 0.5 26 26 24 0.5 2 10 17 20 20 74 88 3.22 13.8 95 109 b u v w n p 4- 5 19- 0.5 2- 2.5 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ o / o / u v w vcc vinx gnd viny vinz alm b n vindb vccw almw gndw vccv almv gndv p vccu almu gndu vinu vinv vinw pre- driver pre -driver pre - driver pre - driver pre - driver pre - driver pre -driver vz r alm 1.5k r alm 1.5k vz r alm 1.5k vz vz vz vz vz r alm 1.5k over heating protection circuit 4 12 3 2 1 8 7 6 5 11 10 9 14 16 13 17 18 15 19 u v w vcc vinx gnd viny vinz alm b n vindb vccw almw gndw vccv almv gndv p vccu almu gndu vinu vinv vinw pre- driver pre -driver pre - driver pre - driver pre - driver pre - driver pre -driver vz r alm 1.5k r alm 1.5k vz r alm 1.5k vz vz vz vz vz r alm 1.5k over heating protection circuit 4 4 12 12 3 3 2 2 1 1 8 8 7 7 6 6 5 5 11 11 10 10 9 9 14 14 16 16 13 13 17 17 18 18 15 15 19 19
igbt-ipm characteristics control circuit characteristics (respresentative) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 power supply current vs. switching frequency tj=100 c n-side p-side power supply current : icc (ma) sw itching frequency : fsw (khz) vcc=13v vcc=13v vcc=15v vcc=15v vcc=17v vcc=17v 0 2 4 6 8 10 12 14 20 40 60 80 1 00 120 1 40 under voltage vs. junction temperature under voltag e : vuvt (v) junction temperature : tj (c) 0 0.2 0.4 0.6 0.8 1 20 40 60 80 100 120 140 under voltage hysterisis vs. jnction temperature under voltage hysterisis : vh (v) junction temperature : tj (c) 0 0.5 1 1.5 2 2.5 3 12 13 14 15 16 17 18 alarm hold time vs . power s upply voltage alarm hold time : talm (msec) power supply voltage : vcc (v) tj=125c tj=25c 0 50 100 150 200 12 13 14 15 16 17 18 o ver heating characteris tic s tcoh,tjoh,tch,tjh vs. vcc over heating protection : tco h,tjoh (c) o h hysterisis : tch,tjh (c) power supply voltage : vcc (v) tjo h tcoh tch,tjh 0 0.5 1 1.5 2 2.5 12 13 14 15 16 17 18 input signal threshold voltage vs . p owe r s up ply v oltag e input signal threshold voltage power supply voltage : vcc (v) tj=25c tj=125c } vin(on) } vin(off) : vin(on),vin(off) (v) 7MBP50RJ120
7MBP50RJ120 igbt-ipm 0 10 20 30 40 50 60 70 80 00.511.522.53 co lle ctor current vs. colle ctor-emitter voltage tj=25 c (c hip) vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 0 10 20 30 40 50 60 70 80 0 0 .5 1 1 .5 2 2.5 3 collector current vs. collector-emitter voltage tj=25 c (terminal) vcc=13v vcc=15v vcc=17v collector current : ic (a) c ollector-emit ter vo lta ge : v ce ( v) 0 10 20 30 40 50 60 70 80 00.511.522.53 collector current vs. collector-emitter voltage tj=125 c (chip) vcc=13v vcc=15v vcc=17v collector current : ic (a) c olle ct or- emitt er vo lta ge : v ce ( v) 0 10 20 30 40 50 60 70 80 00.511.522.53 collector current vs. collector-emitter voltage tj=12 5 c (terminal) vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 0 10 20 30 40 50 60 70 80 00.511.522.5 forward current vs. forward voltage (chip) 125c 25c forward current : if (a) forward voltage : vf (v) 0 10 20 30 40 50 60 70 80 00.511.522.53 forward current vs. forward voltage (terminal) 125c 25c forward current : if (a) forward voltage : vf (v) main circuit characteristics (respresentative)
7MBP50RJ120 igbt-ipm 0 5 10 15 20 25 0 1020304050607080 switching loss vs. collector current edc=600v,vcc=15v,tj=25 c eon eo ff err switching loss : eon,eoff,err (mj/cycle) collector current : ic (a) 0 5 10 15 20 25 0 1020304050607080 switching loss vs. collector current edc=600v,vcc=15v,tj=125 c eon eoff err s wit ching lo ss : e on,e off,er r (mj/c yc le) collector current : ic (a) 0. 01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance thermal resistance : rth(j-c) (c/w) pulse width :pw (sec) fw d igbt 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 160 power derating for igbt (per device) collecter power dissipation : pc (w) case temperature : tc (c) 0 25 50 75 100 125 150 0 20 40 60 80 1 00 120 1 40 1 60 power derating for fwd (per device) collecter pow er dissipation : pc (w) case temperature : tc (c) 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 1400 reversed biased safe operating area vcc=15v,tj 125 c collector current : ic (a) collector-emitter voltage : vce (v) scsoa (non-repetitive pulse) rbsoa (repetitive pulse)
7MBP50RJ120 igbt-ipm 10 100 10 00 10000 0 1020304050607080 switching time vs. collector current edc=600v,vcc=15v,tj=25 c switching time : ton,toff,tf (nsec) collector current : ic (a) toff ton tf 10 100 10 00 10000 0 1020304050607080 switching time vs . c ollec tor c urrent edc =600v,vcc =15v,tj=125 c sw itching tim e : to n, tof f,tf (nse c) collector current : ic (a) toff ton tf 10 100 10 00 0 1020304050607080 reverse re co ve ry characte ris tic s trr,irr vs. if reverse recovery current : irr(a) reverse recovery time : trr(nsec) forward current : if(a) trr125c trr25c irr125c irr25c
7MBP50RJ120 igbt-ipm dynamic brake characteristics (representative) 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 collector current vs. collector-emitter voltage tj=25 c ( terminal) vcc=13v vcc=15v vcc=17v collector current : ic (a) c olle ct or- emitt er voltage : v ce (v) 0 5 10 15 20 25 30 35 40 00.511.522.53 collector current vs. collector-emitter voltage tj=125 c( terminal) vcc=13v vcc=15v vcc=17v collector current : ic (a) c olle ct or- emitt er vo lta ge : v ce ( v) 0.01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance thermal resistance : rth(j-c) (c/w) pulse width :pw (sec) igbt 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 power derating for igbt (per device) co llecte r p ow er diss ipa tio n : pc ( w) case temperature : tc (c) 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 revers ed bias ed safe operating area vcc=15v,tj 125 c c ollector current : ic (a) c ollector-em itter voltage : vce (v) scsoa (non-repetitive pulse) rbsoa (repetitive pulse)
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